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NTD4302
TYPICAL CHARACTERISTICS
100
100 m s
di/dt
10
V GS = 10 V
SINGLE PULSE
T C = 25 ° C
1 ms
10 ms
I S
t a
t rr
t b
TIME
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
t p
I S
0.25 I S
1
0.1
1
10
100
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
DUTY CYCLE
Figure 12. Diode Reverse Recovery Waveform
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
100
10
0.2
0.1
0.05
0.02
D = 0.5
1
0.1
0.01
SINGLE PULSE
P (pk)
t 1
t 2
DUTY CYCLE, D = t 1 /t 2
R q JA (t) = r(t) R q JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) - T A = P (pk) R q JA (t)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
1E+03
t, TIME (seconds)
Figure 13. Thermal Response ? Various Duty Cycles
ORDERING INFORMATION
NTD4302G
NTD4302 ? 1G
NTD4302T4G
Device
Package Type
DPAK
DPAK ? 3
DPAK
Package
369C
(Pb ? Free)
369D
(Pb ? Free)
369C
(Pb ? Free)
Shipping ?
75 Units / Rail
75 Units / Rail
2500 Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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相关代理商/技术参数
NTD4302G
制造商:ON Semiconductor 功能描述:MOSFET
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NTD45
制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
